| PART |
Description |
Maker |
| PHN210T |
Dual N-channel TrenchMOS intermediate level FET 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
NXP Semiconductors N.V.
|
| BUK6E3R4-40C |
N-channel TrenchMOS intermediate level FET 100 A, 40 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
NXP Semiconductors N.V.
|
| BUK653R7-30C |
N-channel TrenchMOS intermediate level FET
|
NXP Semiconductors N.V.
|
| BUK625R2-30C |
N-channel TrenchMOS intermediate level FET
|
NXP Semiconductors
|
| BUK6C3R3-75C |
N-channel TrenchMOS intermediate level FET
|
NXP Semiconductors
|
| BUK6217-55C |
N-channel TrenchMOS intermediate level FET
|
NXP Semiconductors N.V.
|
| FDMQ8203 |
100V Dual N-Channel and Dual P-Channel PowerTrenchMOSFET, GreenBridgeSeries of High-Efficiency Bridge Rectifiers
GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench? MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ
|
Fairchild Semiconductor
|
| FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
| FDMS9620SNBSP FDMS9620S07 FDMS9620S |
30V Dual N-Channel PowerTrenchMOSFET
30V Dual N-Channel PowerTrench® MOSFET
Dual N-Channel PowerTrench㈢ MOSFET
Dual N-Channel PowerTrench庐 MOSFET
Dual N-Channel PowerTrench? MOSFET
|
Fairchild Semiconductor
|
|
